Femtosecond intersubband relaxation and population inversion in stepped quantum well
نویسندگان
چکیده
منابع مشابه
Intersubband relaxation dynamics in semiconductor quantum structures
We monitor the temporal evolution of the electron population in the first and second subband of an undoped GaAs/AlGaAs asymmetric double quantum well after interband optical excitation by using an interband pump/intersubband probe technique. The spacing between the two subbands is smaller than the longitudinal optical phonon energy. We extract an intersubband lifetime of T21 = 100 ps and a reco...
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We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as th...
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We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from interand intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily resp...
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An optically-pumped intersubband laser generator is proposed in which the continuum states above an A1 0.2Ga 0.8.4s GaAs A1 o2Ga o.sAs single quantum well with a width of L = 17 nm serve as the highest level in a four-level laser system. The design allows much greater flexibility in the choice of pumping source and simplifies considerabb the device fabrication. We have obtained the electronic s...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.116404